AF4502C p & n-channel 30-v (d-s) mosfet this datasheet contains new product information. anachip corp. re serves the rights to modify the product specification without notice. no liability is assumed as a result of the use of this product. no rights under any patent accompany the sale of the product. rev. 1.1 jul 20, 2004 1/8 features -low r ds(on) provides higher efficiency and extends battery life -miniature so-8 surface mount package saves board space -high power and current handling capability -low side high current dc-dc converter applications product summary v ds (v) r ds(on) (m ? ) i d (a) 20@v gs =4.5v 8.4 30 13.5@v gs =10v 10.0 30@v gs =-4.5v -6.8 -30 19@v gs =-10v -8.5 pin assignments sop-8 5 6 7 8 4 3 2 1 d1 d1 d2 d2 s1 g1 s2 g2 general description these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are pwmdc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. pin descriptions pin name description s1 source (nmos) g1 gate (nmos) d1 drain (nmos) s2 source (pmos) g2 gate (pmos) d2 drain (pmos) ordering information ax 4502c x x x pn package feature f :mosfet s: sop-8 lead free blank : normal l : lead free package packing blank : tube or bulk a : tape & reel
AF4502C p & n-channel 30-v (d-s) mosfet anachip corp. www.anachip.com.tw rev. 1.1 j ul 20, 2004 2/8 absolute maxi mum ratings (t a =25oc unless otherwise noted) symbol parameter n-channel p-channel units v ds drain-source voltage 30 -30 v gs gate-source voltage 20 -25 v t a =25oc 10 -8.5 i d continuous drain current (note 1) t a =70oc 8.1 -6.8 a i dm pulsed drain current (note 2) 50 50 a i s continuous source current (diode conduction) (note 1) 2.3 -2.1 a t a =25oc 2.1 2.1 p d power dissipation (note 1) t a =70oc 1.3 1.3 w t j , t stg operating junction and storage temperature range - -55 to 150 oc thermal resistance ratings symbol parameter maximum units r jc maximum junction-to-case (note 1) t < 5 sec 40 oc/w r ja maximum junction-to-ambient (note 1) t < 5 sec 60 oc/w note 1: surface mounted on 1?x 1? fr4 board. note 2: pulse width limited by maximum junction temperature specifications (t a =25oc unless otherwise noted) limits symbol parameter test conditions ch min. typ. max. unit static v gs =0v, i d =250ua n 30 - - v (br)dss drain-source breakdown voltage v gs =0v, i d =-250ua p -30 - - v v ds = v gs , i d =250ua n 1 1.95 3 v gs(th) gate-threshold voltage v ds = v gs , i d =-250ua p -1.0 -1.6 -3 v v gs =20v, v ds =0v n - - 100 i gss gate-body leakage v gs =-20v, v ds =0v p - - 100 na v ds =24v, v gs =0v n - - 1 i dss zero gate voltage drain current v ds =-24v, v gs =0v p - - -1 ua v ds =5v, v gs =10v n 20 - - i d(on) on-state drain current (note 3) v ds =-5v, v gs =-10v p -50 - - a v gs =10v, i d =10a - 11 13.5 v gs =4.5v, i d =8.4a n - 15 20 v gs =-10v, i d =-8.5a - 16 19 r ds(on) drain-source on-resistance (note 3) v gs =-4.5v, i d =-6.8a p - 26 30 m ? v ds =15v, i d =10a n - 40 - g fs forward tranconductance (note 3) v ds =-15v, i d =-9.5a p - 31 - s
AF4502C p & n-channel 30-v (d-s) mosfet anachip corp. www.anachip.com.tw rev. 1.1 j ul 20, 2004 3/8 specifications (t a =25oc unless otherwise noted) limits symbol parameter test conditions ch min. typ. max. unit dynamic n - 12 19 q g total gate charge p - 13 26 n - 3.3 - q gs gate-source charge p - 5.8 - n - 4.5 - q gd gate-drain charge n-channel v ds =15v, v gs =4.5v i d =10a p-channel v ds =-15v, v gs =-4.5v i d =-10a p - 12 - nc switching n - 20 30 t d(on) turn-on delay time p - 15 26 n - 9 20 t r rise time p - 16 21 n - 70 102 t d(off) turn-off delay time p - 62 108 n - 20 81 t f fall-time n-channel v dd =15, v gs =10v i d =1a, r gen =25 ? p-channel v dd =-15, v gs =-10v i d =-1a, r gen =15 ? p 46 71 ns note 3: pulse test: pw < 300us duty cycle < 2%. note 4: guaranteed by design, not subject to production testing.
AF4502C p & n-channel 30-v (d-s) mosfet anachip corp. www.anachip.com.tw rev. 1.1 j ul 20, 2004 4/8 typical performance characteristics
AF4502C p & n-channel 30-v (d-s) mosfet anachip corp. www.anachip.com.tw rev. 1.1 j ul 20, 2004 5/8 typical performance charac teristics (continued)
AF4502C p & n-channel 30-v (d-s) mosfet anachip corp. www.anachip.com.tw rev. 1.1 j ul 20, 2004 6/8 typical performance charact eristics (c ontinued)
AF4502C p & n-channel 30-v (d-s) mosfet anachip corp. www.anachip.com.tw rev. 1.1 j ul 20, 2004 7/8 typical performance charact eristics (c ontinued)
AF4502C p & n-channel 30-v (d-s) mosfet anachip corp. www.anachip.com.tw rev. 1.1 j ul 20, 2004 8/8 marking information sop-8l ( top view ) 1 8 4 5 0 2 c aa y w x year code: part number lot code: week code: factory code "a~z": 01~26; "a ~z ": 27~52 "4" =2004 ~ "a~z": 01~26; "a ~z ": 27~52 "x": non-lead free; "x": lead free logo package information package type: sop-8l view "a" l c view "a" h e a a2 a1 b e d 7 (4x) 0.015x45 7 (4x) y dimensions in millimeters dimensions in inches symbol min. nom. max. min. nom. max. a 1.40 1.60 1.75 0.055 0.063 0.069 a1 0.10 - 0.25 0.040 - 0.100 a2 1.30 1.45 1. 50 0.051 0.057 0.059 b 0.33 0.41 0.51 0.013 0.016 0.020 c 0.19 0.20 0.25 0.0075 0.008 0.010 d 4.80 5.05 5.30 0.189 0.199 0.209 e 3.70 3.90 4.10 0.146 0.154 0.161 e - 1.27 - - 0.050 - h 5.79 5.99 6.20 0.228 0.236 0.244 l 0.38 0.71 1.27 0.015 0.028 0.050 y - - 0.10 - - 0.004 0 o - 8 o 0 o - 8 o
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